motorola semiconductor technical data motorola tvs/zener device data 6-1 500 mw do-35 glass data sheet 1 to 3 watt do-41 surmetic 30 zener voltage regulator diodes general data applicable to all series in this group 1 to 3 watt surmetic 30 silicon zener diodes ...a complete series of 1 to 3 watt zener diodes with limits and operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions. all this in an axial-lead, transfer-molded plastic package offering protection in all common environmen- tal conditions. specification features: ? surge rating of 98 watts @ 1 ms ? maximum limits guaranteed on up to six electrical parameters ? package no larger than the conventional 1 watt package mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable polarity: cathode indicated by color band. when operated in zener mode, cathode will be positive with respect to anode mounting position: any weight: 0.4 gram (approx) wafer fab location: phoenix, arizona assembly/test location: seoul, korea maximum ratings rating symbol value unit dc power dissipation @ t l = 75 c lead length = 3/8 derate above 75 c p d 3 24 watts mw/ c dc power dissipation @ t a = 50 c derate above 50 c p d 1 6.67 watt mw/ c operating and storage junction temperature range t j , t stg 65 to +200 c 1n5913b series case 59-03 do-41 plastic 13 watt do-41 surmetic 30 1 to 3 watt zener regulator diodes 3.3400 volts figure 1. power temperature derating curve t l , lead temperature ( c) p , maximum dissipation (watts) d 0 20 40 60 200 80 100 120 140 160 180 0 1 2 3 4 5 l = 1/8 l = 3/8 l = 1 l = lead length to heat sink
general data e 500 mw do-35 glass motorola tvs/zener device data 6-2 500 mw do-35 glass data sheet *maximum ratings rating symbol value unit dc power dissipation @ t l = 75 c, lead length = 3/8 derate above 75 c p d 1.5 12 watts mw/ c *electrical characteristics (t l = 30 c unless otherwise noted. v f = 1.5 volts max @ l f = 200 madc for all types.) motorola type nominal zener voltage v z @i zt test current max. zener impedance (note 4) max. reverse leakage current maximum dc zener current t ype number (note 1) v z @ i zt volts (note 2 and 3) c urren t i zt ma z zt @i zt ohms z zk ohms i zk ma @ i r m a v r volts @ c urrent i zm madc 1n5913b 3.3 113.6 10 500 1 100 1 454 1n5914b 3.6 104.2 9 500 1 75 1 416 1n5917b 4.7 79.8 5 500 1 5 1.5 319 1n5919b 5.6 66.9 2 250 1 5 3 267 1n5920b 6.2 60.5 2 200 1 5 4 241 1n5921b 6.8 55.1 2.5 200 1 5 5.2 220 1n5923b 8.2 45.7 3.5 400 0.5 5 6.5 182 1n5924b 9.1 41.2 4 500 0.5 5 7 164 1n5925b 10 37.5 4.5 500 0.25 5 8 150 1n5927b 12 31.2 6.5 550 0.25 1 9.1 125 1n5929b 15 25 9 600 0.25 1 11.4 100 1n5930b 16 23.4 10 600 0.25 1 12.2 93 1n5931b 18 20.8 12 650 0.25 1 13.7 83 1n5932b 20 18.7 14 650 0.25 1 15.2 75 1n5933b 22 17 17.5 650 0.25 1 16.7 68 1n5934b 24 15.6 19 700 0.25 1 18.2 62 1n5935b 27 13.9 23 700 0.25 1 20.6 55 1n5936b 30 12.5 26 750 0.25 1 22.8 50 1n5937b 33 11.4 33 800 0.25 1 25.1 45 1n5938b 36 10.4 38 850 0.25 1 27.4 41 1n5940b 43 8.7 53 950 0.25 1 32.7 34 1n5941b 47 8 67 1000 0.25 1 35.8 31 1n5942b 51 7.3 70 1100 0.25 1 38.8 29 1n5943b 56 6.7 86 1300 0.25 1 42.6 26 1n5944b 62 6 100 1500 0.25 1 47.1 24 1n5945b 68 5.5 120 1700 0.25 1 51.7 22 1n5946b 75 5 140 2000 0.25 1 56 20 1n5947b 82 4.6 160 2500 0.25 1 62.2 18 1n5948b 91 4.1 200 3000 0.25 1 69.2 16 1n5950b 110 3.4 300 4000 0.25 1 83.6 13 1n5951b 120 3.1 380 4500 0.25 1 91.2 12 1n5952b 130 2.9 450 5000 0.25 1 98.8 11 1n5953b 150 2.5 600 6000 0.25 1 114 10 1n5954b 160 2.3 700 6500 0.25 1 121.6 9 1n5955b 180 2.1 900 7000 0.25 1 136.8 8 1n5956b 200 1.9 1200 8000 0.25 1 152 7 *indicates jedec registered data. note 1. tolerance and voltage designation tolerance designation e device tolerances of 5% are indicated by a abo suffix. note 2. special selections available include: nominal zener voltages between those shown and 1% and 2% tight voltage tolerances. consult factory. note 3. zener voltage (v z ) measurement motorola guarantees the zener voltage when meausred at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. note 4. zener impedance (z z ) derivation the zener impedance is derived from the 60 cycle ac voltage, which results when an ac cur- rent having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk .
general data e 500 mw do-35 glass motorola tvs/zener device data 6-3 500 mw do-35 glass data sheet t, time (seconds) 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d =0.5 0.2 0.1 0.05 0.01 d = 0 duty cycle, d =t 1 /t 2 q jl (t, d) transient thermal resistance junction-to-lead ( c/w) p pk t 1 note: below 0.1 second, thermal response curve is applicable to any lead length (l). single pulse d t jl = q jl (t)p pk repetitive pulses d t jl = q jl (t,d)p pk t 2 0.02 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk 1 2 5 10 20 50 100 200 400 1000 0.0003 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 t a = 125 c t a = 125 c nominal v z (volts) as specified in elec. char. table figure 2. typical thermal response l, lead length = 3/8 inch figure 3. maximum surge power figure 4. typical reverse leakage i r , reverse leakage ( m adc) @ v r rectangular nonrepetitive waveform t j =25 c prior to initial pulse application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junc- tion temperature under any set of operating conditions in order to calculate its value. the following procedure is recom- mended: lead temperature, t l , should be determined from: t l = q la p d + t a q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 3040 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the mea- sured value of t l , the junction temperature may be deter- mined by: t j = t l + d t jl d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for a train of power pulses (l = 3/8 inch) or from figure 10 for dc power. d t jl = q jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j q vz , the zener voltage temperature coefficient, is found from figures 5 and 6. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 2 should not be used to compute surge capa- bility. surge limitations are given in figure 3. they are lower than would be expected by considering only junction tempera- ture, as current crowding effects cause temperatures to be ex- tremely high in small spots resulting in device degradation should the limits of figure 3 be exceeded.
general data e 500 mw do-35 glass motorola tvs/zener device data 6-4 500 mw do-35 glass data sheet figure 5. units to 12 volts figure 6. units 10 to 400 volts figure 7. v z = 3.3 thru 10 volts figure 8. v z = 12 thru 82 volts figure 9. v z = 100 thru 400 volts figure 10. typical thermal resistance zener voltage versus zener current (figures 7, 8 and 9) temperature coefficient ranges (90% of the units are in the ranges indicated) v z , zener voltage @ i zt (volts) 34 5 6 789101112 10 8 6 4 2 0 2 4 range , temperature coefficient (mv/ c) @ i zt vz q 1000 500 200 100 50 20 10 10 20 50 100 200 400 1000 v z , zener voltage @ i zt (volts) , temperature coefficient (mv/ c) @ i zt vz q 01 234 56 7 8910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) i , zener current (ma) z 2 5 3 0 10 203040 50 607080 90100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 100 200 300 400 250 350 150 10 1 0.5 0.2 0.1 v z , zener voltage (volts) 2 5 i , zener current (ma) z 0 10 20 30 40 50 60 70 80 l, lead length to heat sink (inch) primary path of conduction is through the cathode lead 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 t l jl , junction-to-lead thermal resistance q l l ( c/w)
general data e 500 mw do-35 glass motorola tvs/zener device data 6-5 500 mw do-35 glass data sheet 13 watt do-41 surmetic 30 multiple package quantity (mpq) requirements zener voltage regulator diodes e axial leaded case 59-03 do-41 plastic (refer to section 10 for surface mount, thermal data and footprint information.) (refer to section 10 for more information on packaging specifications.) package option tape and reel 6k type no. suffix rl mpq (units) tape and ammo ta 4k notes: 1. all rules and notes associated with jedec do-41 outline shall apply. 2. polarity denoted by cathode band. 3. lead diameter not controlled within f dimension. k k f a f d min min max max millimeters inches dim 4.07 2.04 0.71 e 27.94 5.20 2.71 0.86 1.27 e 0.160 0.080 0.028 e 1.100 0.205 0.107 0.034 0.050 e a b d f k b
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